Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür

Cleaning composition for removing resists contains (A) a salt of hydrofluoric acid (HF) and a base containing a non-metal, (B1) a water-soluble organic solvent, (C) an (in)organic acid and (D) water and has a pH of 4-8. Independent claims are also included for the following: (1) cleaning composition...

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Bibliographische Detailangaben
Hauptverfasser:	KISHIO, ETSURO, HIRAGA, TOSHITAKA, SUZUKI, TOMOKO, HIGASHI, MASAHIKO, HIDAKA, YOSHIHARU, ASAOKA, YASUHIRO, AOYAMA, TETSUO, NAGAI, TOSHIHIKO, KANNO, ITARU
Format:	Patent
Sprache:	ger
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CINEMATOGRAPHY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FATTY ACIDS THEREFROM HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	Cleaning composition for removing resists contains (A) a salt of hydrofluoric acid (HF) and a base containing a non-metal, (B1) a water-soluble organic solvent, (C) an (in)organic acid and (D) water and has a pH of 4-8. Independent claims are also included for the following: (1) cleaning composition, pH 4-8, containing components (A), (B1), (C) and (D) as above and (E1) ammonium salt; (2) cleaning composition, pH 2-8, containing components (A) salt as above, (B) water-soluble organic solvent, (C1) phosphonic acid, (D) water and (E) a base containing a non-metal; cleaning composition, pH 2-8, containing components (A), (B2), (C2), (D) and (E) as above and (F) a copper-corrosion inhibitor; (3) 3 methods of producing a semiconductor device, in which the residues of the resist film or from dry etching are removed with the cleaning composition.