Dynamic memory cell refreshing method for memory circuit for mobile applications effected with minimum current requirement

The memory cell refreshing method has the word line (WL) coupled to the memory cell (2) activated, with amplification of the charge potential of the bit lines (BL) of the bit line pair (BLP) in the direction of a higher or a lower refresh potential, in dependence on the charge information held in th...

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Bibliographische Detailangaben

1. Verfasser:	DOBLER, MANFRED
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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