Production of a trench semiconductor component used as a power semiconductor component comprises completely filling the trench with a further material before ion implantation is carried out

Production of a trench semiconductor component comprises coating parts of the trench walls with an insulating layer (3) after forming a trench in a semiconductor body (1), partially filling the trench with a first material (4) in the semiconductor body, and inserting a doped zone (6') in a region close to the trench by ion implantation (7). The trench is completely filled with a further material (10) before ion implantation is carried out. Die Erfindung betrifft ein Verfahren zum Herstellen eines Trench-Halbleiterbauelements, bei dem eine Trenchseitenwand-Implantation durch Auffüllen des Trenches (2) mit Isoliermaterial (10) und Planarisieren der Oberfläche vor den Implantationsschritten vermieden wird.