Verfahren zum Durchführen von Testmessungen an lichtemittierenden Bauelementen
An electronic component (L) on wafer test procedure tests single or groups (100, 110, 120) of LED (Light Emitting Diode) or VCSEL (Vertical Cavity Self Emitting Laser) diode components after wafer processing using a monolithic integrated semiconductor wafer field effect transistor (T1, T2) switch ma...
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creator | PETTER, ROBERT REZNIK, DANIEL GEWALD, MANFRED SCHMID, PETER KAESEMODEL, THOMAS DROEGE, ELMAR |
description | An electronic component (L) on wafer test procedure tests single or groups (100, 110, 120) of LED (Light Emitting Diode) or VCSEL (Vertical Cavity Self Emitting Laser) diode components after wafer processing using a monolithic integrated semiconductor wafer field effect transistor (T1, T2) switch matrix on the wafer. Includes an Independent claim for the parallel connection of protective diodes (LS). |
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subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
title | Verfahren zum Durchführen von Testmessungen an lichtemittierenden Bauelementen |
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