Verfahren zum Durchführen von Testmessungen an lichtemittierenden Bauelementen

An electronic component (L) on wafer test procedure tests single or groups (100, 110, 120) of LED (Light Emitting Diode) or VCSEL (Vertical Cavity Self Emitting Laser) diode components after wafer processing using a monolithic integrated semiconductor wafer field effect transistor (T1, T2) switch ma...

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Hauptverfasser: PETTER, ROBERT, REZNIK, DANIEL, GEWALD, MANFRED, SCHMID, PETER, KAESEMODEL, THOMAS, DROEGE, ELMAR
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creator PETTER, ROBERT
REZNIK, DANIEL
GEWALD, MANFRED
SCHMID, PETER
KAESEMODEL, THOMAS
DROEGE, ELMAR
description An electronic component (L) on wafer test procedure tests single or groups (100, 110, 120) of LED (Light Emitting Diode) or VCSEL (Vertical Cavity Self Emitting Laser) diode components after wafer processing using a monolithic integrated semiconductor wafer field effect transistor (T1, T2) switch matrix on the wafer. Includes an Independent claim for the parallel connection of protective diodes (LS).
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subjects MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
title Verfahren zum Durchführen von Testmessungen an lichtemittierenden Bauelementen
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