Verfahren zum Durchführen von Testmessungen an lichtemittierenden Bauelementen

An electronic component (L) on wafer test procedure tests single or groups (100, 110, 120) of LED (Light Emitting Diode) or VCSEL (Vertical Cavity Self Emitting Laser) diode components after wafer processing using a monolithic integrated semiconductor wafer field effect transistor (T1, T2) switch ma...

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Bibliographische Detailangaben
Hauptverfasser:	PETTER, ROBERT, REZNIK, DANIEL, GEWALD, MANFRED, SCHMID, PETER, KAESEMODEL, THOMAS, DROEGE, ELMAR
Format:	Patent
Sprache:	ger
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	An electronic component (L) on wafer test procedure tests single or groups (100, 110, 120) of LED (Light Emitting Diode) or VCSEL (Vertical Cavity Self Emitting Laser) diode components after wafer processing using a monolithic integrated semiconductor wafer field effect transistor (T1, T2) switch matrix on the wafer. Includes an Independent claim for the parallel connection of protective diodes (LS).