SOI-Transistorelement mit einem verbesserten Rückseitenkontakt und ein Verfahren zur Herstellung desselben und Verfahren zur Herstellung eines Ohmschen Kontaktes auf einem Substrat

The present invention relates to a method of forming contacts of semiconductor devices manufactured on silicon-on-oxide (SOI) wafers. According to the method of the present invention, a heavily doped region is formed in the backside silicon layer during the manufacturing process and a backside contact to the heavily doped region is provided at the end of the manufacturing process. The backside contact exhibits nearly ohmic characteristics avoiding the drawbacks arising from Schottky backside contacts as formed with the usual prior art methods. Moreover, a transistor including a backside contact with an ohmic substrate contact junction is disclosed.