Semiconductor component e.g. laser diode chip has contact portion that is provided for externally and electrically contacting semiconductor component with bonding compound, and patterning portion that is provided with elongated recess

The semiconductor component (1) has a contact portion (2) that is provided for externally and electrically contacting the semiconductor component with a bonding compound. A patterning portion (3) of contact portion is provided with an elongated recess (30). Main extending directions (31) of the rece...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GOH, GIM-WAE, SEE, HONG-PENG, CHANG, SENG-TEONG, OOI, CHEE-ENG
Format: Patent
Sprache:eng ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GOH, GIM-WAE
SEE, HONG-PENG
CHANG, SENG-TEONG
OOI, CHEE-ENG
description The semiconductor component (1) has a contact portion (2) that is provided for externally and electrically contacting the semiconductor component with a bonding compound. A patterning portion (3) of contact portion is provided with an elongated recess (30). Main extending directions (31) of the recesses are extended in parallel to each other. A contact material is provided for surrounding the recess. An independent claim is included for a method for manufacturing external electrical contact of semiconductor component. Es wird ein Halbleiterbauelement (1) mit einem Kontakt (2) zur externen elektrischen Kontaktierung des Halbleiterbauelements mit einer Bond-Verbindung (4) abgegeben, wobei der Kontakt eine Strukturierung (3) mit zumindest einer Vertiefung (30) aufweist. Weiterhin wird ein Verfahren zur Herstellung einer externen elektrischen Kontaktierung angegeben.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE102012109995A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE102012109995A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE102012109995A13</originalsourceid><addsrcrecordid>eNqNjr1OA0EMhK-hQMA7uKGD6C4oxZUIguihj8zu5M7Sxl7tOvy8Mk_B3SltJCrLM-NvfNn8vuEgwTQeg1uhYIdsCnXCalhR4opCUSyCwiiZRq5TRp2DU7biYko-spNUysU-JSLSfgLh21GUU_oh1khICF4kLMIJIDpQPdP-JT7Sx2TMoUU-arxbUJl9Rs_G2Q-WcyTTgX1aCwJqvW4u9pwqbk7zqrl92b4_vd4j2w41c4DCd8_brl233bpr-77fPHYP_839AQk_dBE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor component e.g. laser diode chip has contact portion that is provided for externally and electrically contacting semiconductor component with bonding compound, and patterning portion that is provided with elongated recess</title><source>esp@cenet</source><creator>GOH, GIM-WAE ; SEE, HONG-PENG ; CHANG, SENG-TEONG ; OOI, CHEE-ENG</creator><creatorcontrib>GOH, GIM-WAE ; SEE, HONG-PENG ; CHANG, SENG-TEONG ; OOI, CHEE-ENG</creatorcontrib><description>The semiconductor component (1) has a contact portion (2) that is provided for externally and electrically contacting the semiconductor component with a bonding compound. A patterning portion (3) of contact portion is provided with an elongated recess (30). Main extending directions (31) of the recesses are extended in parallel to each other. A contact material is provided for surrounding the recess. An independent claim is included for a method for manufacturing external electrical contact of semiconductor component. Es wird ein Halbleiterbauelement (1) mit einem Kontakt (2) zur externen elektrischen Kontaktierung des Halbleiterbauelements mit einer Bond-Verbindung (4) abgegeben, wobei der Kontakt eine Strukturierung (3) mit zumindest einer Vertiefung (30) aufweist. Weiterhin wird ein Verfahren zur Herstellung einer externen elektrischen Kontaktierung angegeben.</description><language>eng ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140424&amp;DB=EPODOC&amp;CC=DE&amp;NR=102012109995A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140424&amp;DB=EPODOC&amp;CC=DE&amp;NR=102012109995A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOH, GIM-WAE</creatorcontrib><creatorcontrib>SEE, HONG-PENG</creatorcontrib><creatorcontrib>CHANG, SENG-TEONG</creatorcontrib><creatorcontrib>OOI, CHEE-ENG</creatorcontrib><title>Semiconductor component e.g. laser diode chip has contact portion that is provided for externally and electrically contacting semiconductor component with bonding compound, and patterning portion that is provided with elongated recess</title><description>The semiconductor component (1) has a contact portion (2) that is provided for externally and electrically contacting the semiconductor component with a bonding compound. A patterning portion (3) of contact portion is provided with an elongated recess (30). Main extending directions (31) of the recesses are extended in parallel to each other. A contact material is provided for surrounding the recess. An independent claim is included for a method for manufacturing external electrical contact of semiconductor component. Es wird ein Halbleiterbauelement (1) mit einem Kontakt (2) zur externen elektrischen Kontaktierung des Halbleiterbauelements mit einer Bond-Verbindung (4) abgegeben, wobei der Kontakt eine Strukturierung (3) mit zumindest einer Vertiefung (30) aufweist. Weiterhin wird ein Verfahren zur Herstellung einer externen elektrischen Kontaktierung angegeben.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjr1OA0EMhK-hQMA7uKGD6C4oxZUIguihj8zu5M7Sxl7tOvy8Mk_B3SltJCrLM-NvfNn8vuEgwTQeg1uhYIdsCnXCalhR4opCUSyCwiiZRq5TRp2DU7biYko-spNUysU-JSLSfgLh21GUU_oh1khICF4kLMIJIDpQPdP-JT7Sx2TMoUU-arxbUJl9Rs_G2Q-WcyTTgX1aCwJqvW4u9pwqbk7zqrl92b4_vd4j2w41c4DCd8_brl233bpr-77fPHYP_839AQk_dBE</recordid><startdate>20140424</startdate><enddate>20140424</enddate><creator>GOH, GIM-WAE</creator><creator>SEE, HONG-PENG</creator><creator>CHANG, SENG-TEONG</creator><creator>OOI, CHEE-ENG</creator><scope>EVB</scope></search><sort><creationdate>20140424</creationdate><title>Semiconductor component e.g. laser diode chip has contact portion that is provided for externally and electrically contacting semiconductor component with bonding compound, and patterning portion that is provided with elongated recess</title><author>GOH, GIM-WAE ; SEE, HONG-PENG ; CHANG, SENG-TEONG ; OOI, CHEE-ENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE102012109995A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GOH, GIM-WAE</creatorcontrib><creatorcontrib>SEE, HONG-PENG</creatorcontrib><creatorcontrib>CHANG, SENG-TEONG</creatorcontrib><creatorcontrib>OOI, CHEE-ENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOH, GIM-WAE</au><au>SEE, HONG-PENG</au><au>CHANG, SENG-TEONG</au><au>OOI, CHEE-ENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor component e.g. laser diode chip has contact portion that is provided for externally and electrically contacting semiconductor component with bonding compound, and patterning portion that is provided with elongated recess</title><date>2014-04-24</date><risdate>2014</risdate><abstract>The semiconductor component (1) has a contact portion (2) that is provided for externally and electrically contacting the semiconductor component with a bonding compound. A patterning portion (3) of contact portion is provided with an elongated recess (30). Main extending directions (31) of the recesses are extended in parallel to each other. A contact material is provided for surrounding the recess. An independent claim is included for a method for manufacturing external electrical contact of semiconductor component. Es wird ein Halbleiterbauelement (1) mit einem Kontakt (2) zur externen elektrischen Kontaktierung des Halbleiterbauelements mit einer Bond-Verbindung (4) abgegeben, wobei der Kontakt eine Strukturierung (3) mit zumindest einer Vertiefung (30) aufweist. Weiterhin wird ein Verfahren zur Herstellung einer externen elektrischen Kontaktierung angegeben.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; ger
recordid cdi_epo_espacenet_DE102012109995A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor component e.g. laser diode chip has contact portion that is provided for externally and electrically contacting semiconductor component with bonding compound, and patterning portion that is provided with elongated recess
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T17%3A47%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GOH,%20GIM-WAE&rft.date=2014-04-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE102012109995A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true