Method for processing defects of extreme UV mask for extreme UV wavelength range in photolithography for manufacturing integrated circuits, involves locally changing reflection of multilayer structure at region of defect

The method involves locally changing reflection of a multilayer structure (205) at a region of a defect with electron beam, where the defect comprises insulated local defect and/or deviation of a parameter of an optical element i.e. extreme UV mask (200), over a partial region of the element. A barrier layer in the multilayer structure is changed by modifications in the multilayer structure. Interaction depth of the beam in the multilayer structure is adjusted by selection of suitable energy of the beam, where the multilayer structure comprises molybdenum layers (220) and silicon layers (225). An independent claim is also included for a device for processing defects of an optical element for an extreme UV wavelength range. Die Erfindung betrifft ein Verfahren zum Bearbeiten von zumindest einem Defekt eines optischen Elements für den extremen ultravioletten Wellenlängenbereich, das zumindest ein Substrat und zumindest eine Mehrschichtstruktur aufweist, umfassend lokales Verändern der Reflektion der Mehrschichtstruktur im Bereich des zumindest einen Defekts mit einem Elektronenstrahl.