Magnetron sputtering device comprises a target and a magnetic system that are movable with respect to each other

Magnetron sputtering device (1) comprises a target (2) and a magnetic system (3) that are movable with respect to each other and the magnet system form a magnetic field penetrating the target, for producing rotating race tracks. The magnetic field lines (4) run asymmetrically over a surface of a tar...

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Bibliographische Detailangaben
1. Verfasser:	RANK, ROLF
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Magnetron sputtering device (1) comprises a target (2) and a magnetic system (3) that are movable with respect to each other and the magnet system form a magnetic field penetrating the target, for producing rotating race tracks. The magnetic field lines (4) run asymmetrically over a surface of a target material (22) in the reversal region of the race tracks relative to the normal direction of the surface of the target material. Die Erfindung betrifft eine Magnetronsputtereinrichtung, umfassend ein Target und ein Magnetsystem, wobei Target und Magnetsystem relativ zueinander beweglich sind und das Magnetsystem ein das Target durchdringendes Magnetfeld zur Erzeugung eines umlaufenden Racetracks ausbildet, dadurch gekennzeichnet, dass die magnetischen Feldlinien über der Oberfläche des Targetmaterials im Umkehrbereich des Racetracks relativ zur Normalenrichtung der Targetoberfläche asymmetrisch verlaufen.