Verfahren zum Herstellen eines reaktiven Halbzeuges und reaktives Halbzeug

Verfahren zum Herstellen eines reaktiven Halbzeuges für einen Fügeprozess, insbesondere einen Lötprozess, wobei bei dem Verfahren eine reaktive Schichtanordnung (2), die ein reaktives Werkstoffsystem mit wenigstens zwei exotherm miteinander reagierenden Reaktionspartnern enthält, mittels galvanische...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WILDEN, JOHANNES, DR.. HABIL, JAHN, SIMON, BINGEL, ULRICH
Format: Patent
Sprache:ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Verfahren zum Herstellen eines reaktiven Halbzeuges für einen Fügeprozess, insbesondere einen Lötprozess, wobei bei dem Verfahren eine reaktive Schichtanordnung (2), die ein reaktives Werkstoffsystem mit wenigstens zwei exotherm miteinander reagierenden Reaktionspartnern enthält, mittels galvanischen Abscheidens erzeugt wird. The method comprises producing a reactive layer arrangement (2), which contains a reactive material system with two exothermic reaction partners reacted with one another, by galvanic deposition. The reactive layer arrangement is galvanically deposited on a workpiece (1) to be joined. The reactive layer arrangement is galvanically deposited as a component of a semi-finished film on a carrier substrate and then the semi-finished film is detached from the carrier substrate. The reactive layer arrangement is formed with a first reaction partner containing an alternating sequence of layers (2a). The method comprises producing a reactive layer arrangement (2), which contains a reactive material system with two exothermic reaction partners reacted with one another, by galvanic deposition. The reactive layer arrangement is galvanically deposited on a workpiece (1) to be joined. The reactive layer arrangement is galvanically deposited as a component of a semi-finished film on a carrier substrate and then the semi-finished film is detached from the carrier substrate. The reactive layer arrangement is formed with a first reaction partner containing an alternating sequence of layers (2a) and with a second reaction partner containing layers (2b). The individual layers in the reactive layer arrangement are formed as nano-layers. The reactive layer arrangement is formed with a layer thickness of 20-150 mu m. The exothermic reaction partners are galvanically deposited by the electrolytes. The reactive layer arrangement is galvanically deposited under the use of a modulated current flow. During galvanic deposition of the reactive layer arrangement, a production process is selected from the groups of the production processes such as strip galvanizing process, dispersion deposition process and lithographic process. An independent claim is included for a reactive semi-finished product for a soldering process.