Production of silicon-blocks for photovoltaics e.g. solar cell, comprises arranging first silicon-seed and liquid silicon in container, melting the liquid silicon in surface turned to the silicon-seed, and solidifying the liquid silicon
The method for the production of silicon-blocks for photovoltaics e.g. solar cell, comprises arranging a first silicon-seed (29) in a container (23), where the silicon-seed forms a seed surface (A), which corresponds to a base surface (A b) of a base inner wall (25) of the container, arranging liqui...
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Zusammenfassung: | The method for the production of silicon-blocks for photovoltaics e.g. solar cell, comprises arranging a first silicon-seed (29) in a container (23), where the silicon-seed forms a seed surface (A), which corresponds to a base surface (A b) of a base inner wall (25) of the container, arranging liquid silicon (9) in the container, melting the liquid silicon in a surface (30) turned to the silicon-seed, and solidifying the liquid silicon to a first silicon-block (16), where the solidification is carried out on the basis of the melting surface arranged in a solidification direction. The method for the production of silicon-blocks for photovoltaics e.g. solar cell, comprises arranging a first silicon-seed (29) in a container (23), where the silicon-seed forms a seed surface (A), which corresponds to a base surface (A b) of a base inner wall (25) of the container, arranging liquid silicon (9) in the container, melting the liquid silicon in a surface (30) turned to the silicon-seed, and solidifying the liquid silicon to a first silicon-block (16), where the solidification is carried out on the basis of the melting surface arranged in a solidification direction. The base inner wall is formed in a square or hexagonal shaped and uniform manner. The silicon-seed is formed in a plate-shaped manner and has a seed height (H k) and a seed breadth (B k). The seed height is smaller at a factor 10 as the seed width. The silicon-seed is mono or multi crystal and has a seed granular structure with grain boundaries running along the solidification direction. The surface of the solidified first silicon-block is selected in such a manner that it has a granular structure, whose grain density is smaller than the grain density of the seed granular structure. The selected surface is removed from the first silicon-block, and then solidified to a second silicon-block. The selected surface of the first silicon-block is used as second silicon-seed. The first silicon-seed of a seed silicon-block is obtained, which is directly solidified in a seed container with a base inner wall partly formed in a conical manner. The base inner wall forms another seed chamber, in which a single-crystal silicon origin-seed is arranged.
Bei einem Verfahren zur Herstellung von Nichteisenmetall-Blöcken (16) wird in einem Behälter (23) ein Nichteisenmetall-Keim (29) angeordnet, wobei der Nichteisenmetall-Keim (29) eine Keimfläche aufweist, die einer Bodenfläche einer Bodeninnenwand (25) des Behälters (23) en |
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