Double bit cells arrangement for use in non-volatile static RAM memory circuit, has non-volatile memory units arranged adjacent to each other along longitudinal axis, and connected with common control line e.g. recall line

The arrangement has static RAM memory cell arrangements (2, 3) for storing an information bit, and designed as flip-flop memory cells. Non-volatile memory units (4, 5) secure the stored information bit of the SRAM memory cell arrangements. The non-volatile memory units are arranged adjacent to each...

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Bibliographische Detailangaben

Hauptverfasser:	GUENTHER, STEFAN, HOFRICHTER, WILFRIED, THIEM, STEFFEN
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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