Memory device e.g. programmable read only memory device, forming method, involves separating upper and bottom layers, where bottom layer has higher resistance than upper layer against polishing, and upper surface is planarised by polishing

The method involves separating thermally isolating bottom layers (11, 12) on a surface, which exhibits columns (2). An upper layer (13) is separated from the bottom layer, where the bottom layer has higher resistance than the upper layer against polishing. The upper surface is planarised through pol...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	GRUENING, ULRIKE VON SCHWERIN
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!