An amorphous silicon dioxide form body is partly or wholly glazed and infiltrated during melt phase with Barium, Aluminum or Boron compounds

An amorphous silicon dioxide form body is partly or wholly glazed and infiltrated during melt phase with Barium, Aluminum or Boron compounds

An amorphous silicon dioxide form body is partly or wholly glazed, in which areas it is infiltrated with a substance that, on heating to a temperature between 1000[deg] to 1800[deg]C, crystallizes the glazed zones. The infiltrated substance is from the group of Barium, Aluminum or Boron compounds, o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SCHWERTFEGER, FRITZ
Format: Patent
Sprache:eng ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
CRYSTAL GROWTH
GLASS
JOINING GLASS TO GLASS OR OTHER MATERIALS
MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
METALLURGY
MINERAL OR SLAG WOOL
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:An amorphous silicon dioxide form body is partly or wholly glazed, in which areas it is infiltrated with a substance that, on heating to a temperature between 1000[deg] to 1800[deg]C, crystallizes the glazed zones. The infiltrated substance is from the group of Barium, Aluminum or Boron compounds, or a mixture of these. Die Erfindung betrifft einen amorphen SiO¶2¶-Formkörper der dadurch gekennzeichnet ist, dass er in einem Teilbereich oder vollständig verglast ist und in diesem Bereich mit mindestens einer Substanz infiltriert ist, die beim Erhitzen des Formkörpers auf eine Temperatur von 1000 DEG C bis 1800 DEG C zur Kristallisation des verglasten Bereiches führt.