Leistungshalbleitermodul mit Bondverbindung der Leistungshalbleiterbauelemente
The connection has an electrically insulating substrate (10) and a set of conductors (12, 14) arranged in the substrate. A power semiconductor device (20) is arranged in the conductor (12), and is connected with the conductor (14). The power semiconductor device has an electroplating on its head sur...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The connection has an electrically insulating substrate (10) and a set of conductors (12, 14) arranged in the substrate. A power semiconductor device (20) is arranged in the conductor (12), and is connected with the conductor (14). The power semiconductor device has an electroplating on its head surfaces that turn away from the conductor (12). The connection is formed in such a manner that bonding bases (42) are arranged chess board-like on the electroplating of the semiconductor device in same fields. |
|---|