Deckel für optoelektronische Wafermaßstabsgehäuse und Verfahren zu dessen Herstellung

A method for forming a lid for a wafer-scale package includes (1) forming a cavity in a substrate, (2) forming an oxide layer over the cavity and over a bond area around the cavity on the substrate, (3) forming a reflective layer over the oxide layer, (4) forming a barrier layer over the reflective...

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Bibliographische Detailangaben
Hauptverfasser:	GALLUP, KENDRA J, JOHNSON, MARTHA, MATTHEWS, JAMES A
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL TECHNOLOGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for forming a lid for a wafer-scale package includes (1) forming a cavity in a substrate, (2) forming an oxide layer over the cavity and over a bond area around the cavity on the substrate, (3) forming a reflective layer over the oxide layer, (4) forming a barrier layer over the reflective layer, (5) etching a portion of the barrier layer down to a portion of the reflective layer over the bond area, and (6) forming a solder layer on the portion of the reflective layer. The reflective layer can be a titanium-platinum-gold metal stack and the barrier layer can be a titanium dioxide layer.