FeRAM-Speicherzelle, FeRAM-Speicherschaltung und Verfahren zum Speichern eines Datumwertes in einer FeRAM-Speicherzelle

FeRAM-Speicherzelle, FeRAM-Speicherschaltung und Verfahren zum Speichern eines Datumwertes in einer FeRAM-Speicherzelle

The unit has a ferro electric region (4) extending in a section between capacitor electrodes. Another region extends in another section between the former and other two electrodes. Two areas are arranged such that two coercive voltages and remanent polarization in respective sections are different s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BRUCHHAUS, RAINER, ROEHR, THOMAS
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The unit has a ferro electric region (4) extending in a section between capacitor electrodes. Another region extends in another section between the former and other two electrodes. Two areas are arranged such that two coercive voltages and remanent polarization in respective sections are different so that a capacitor structure formed by the electrodes has a level hysteresis characteristic in a polarization-voltage characteristics cure. Independent claims are also included for the following: (1) a ferroelectric random access memory circuit for storing of data with a ferroelectric memory unit (2) a method for storing of data in a ferroelectric memory unit.