Verfahren zur Herstellung eines Grabenkondensators

Verfahren zur Herstellung eines Grabenkondensators

Production of a trench capacitor in which a trench (4) is etched into a substrate (1) coated with a layer of Pa dioxide (2) and Si nitride (3). The upper part of the trench has a sacrificial collar in Al oxide (6) which is not structured by the Al 2O 3-layer masked region, and the Al 2O 3 mask is re...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: BERNHARDT, HENRY
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Production of a trench capacitor in which a trench (4) is etched into a substrate (1) coated with a layer of Pa dioxide (2) and Si nitride (3). The upper part of the trench has a sacrificial collar in Al oxide (6) which is not structured by the Al 2O 3-layer masked region, and the Al 2O 3 mask is removed after subsequent structuring cby etching. Before deposition of the sacrificial collar (6) an intermediate Si monoxide layer (8) of sufficient thickness is deposited on the masked surface.