Method for implanting semiconductor wafer used in production of integrated circuit involves applying amorphous layer on substrate, applying antireflection layer and resist layer, structuring resist layer and implanting ions
Method for implanting a semiconductor wafer comprises preparing the wafer with a substrate (10), applying an amorphous layer (20) on the substrate, applying an antireflection layer (22) on the amorphous layer, applying a resist layer (24) on the antireflection layer, structuring the resist layer to...
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creator | HENKE, DIETMAR FAUL, JUERGEN |
description | Method for implanting a semiconductor wafer comprises preparing the wafer with a substrate (10), applying an amorphous layer (20) on the substrate, applying an antireflection layer (22) on the amorphous layer, applying a resist layer (24) on the antireflection layer, structuring the resist layer to expose the antireflection layer above a first region (12), implanting ions having a first energy, removing the antireflection layer in the first region and implanting ions having a second energy. |
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FAUL, JUERGEN</creator><creatorcontrib>HENKE, DIETMAR ; FAUL, JUERGEN</creatorcontrib><description>Method for implanting a semiconductor wafer comprises preparing the wafer with a substrate (10), applying an amorphous layer (20) on the substrate, applying an antireflection layer (22) on the amorphous layer, applying a resist layer (24) on the antireflection layer, structuring the resist layer to expose the antireflection layer above a first region (12), implanting ions having a first energy, removing the antireflection layer in the first region and implanting ions having a second energy.</description><language>eng ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060511&DB=EPODOC&CC=DE&NR=102004009174B4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060511&DB=EPODOC&CC=DE&NR=102004009174B4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HENKE, DIETMAR</creatorcontrib><creatorcontrib>FAUL, JUERGEN</creatorcontrib><title>Method for implanting semiconductor wafer used in production of integrated circuit involves applying amorphous layer on substrate, applying antireflection layer and resist layer, structuring resist layer and implanting ions</title><description>Method for implanting a semiconductor wafer comprises preparing the wafer with a substrate (10), applying an amorphous layer (20) on the substrate, applying an antireflection layer (22) on the amorphous layer, applying a resist layer (24) on the antireflection layer, structuring the resist layer to expose the antireflection layer above a first region (12), implanting ions having a first energy, removing the antireflection layer in the first region and implanting ions having a second energy.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNj71OAzEMx29hQIV38MJWpBROqlihRSxs7JXJOW2kXBzFTlGfllfBxzHcyGTp9_-Sr7vvd9ITDxC4QhxLwqwxH0FojJ7z0Lya8IWBKjShAWKGUnnikTNwMKB0rKim-Vh9i2rozOlMAlhKukx1OHItJ24CCS9WZVFpn6JTbr2w2XilkGhun72YB6gkUXQGa7Cc7bc6RZbKr3XxhHXITXcVMAnd_t1Vd_e6_3h5u6fCB5KCnjLpYbffuAfneueeNtv-uX_8r-8Hl6pwtg</recordid><startdate>20060511</startdate><enddate>20060511</enddate><creator>HENKE, DIETMAR</creator><creator>FAUL, JUERGEN</creator><scope>EVB</scope></search><sort><creationdate>20060511</creationdate><title>Method for implanting semiconductor wafer used in production of integrated circuit involves applying amorphous layer on substrate, applying antireflection layer and resist layer, structuring resist layer and implanting ions</title><author>HENKE, DIETMAR ; 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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method for implanting semiconductor wafer used in production of integrated circuit involves applying amorphous layer on substrate, applying antireflection layer and resist layer, structuring resist layer and implanting ions |
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