Method for implanting semiconductor wafer used in production of integrated circuit involves applying amorphous layer on substrate, applying antireflection layer and resist layer, structuring resist layer and implanting ions

Method for implanting semiconductor wafer used in production of integrated circuit involves applying amorphous layer on substrate, applying antireflection layer and resist layer, structuring resist layer and implanting ions

Method for implanting a semiconductor wafer comprises preparing the wafer with a substrate (10), applying an amorphous layer (20) on the substrate, applying an antireflection layer (22) on the amorphous layer, applying a resist layer (24) on the antireflection layer, structuring the resist layer to...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HENKE, DIETMAR, FAUL, JUERGEN
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Method for implanting a semiconductor wafer comprises preparing the wafer with a substrate (10), applying an amorphous layer (20) on the substrate, applying an antireflection layer (22) on the amorphous layer, applying a resist layer (24) on the antireflection layer, structuring the resist layer to expose the antireflection layer above a first region (12), implanting ions having a first energy, removing the antireflection layer in the first region and implanting ions having a second energy.