Monofrequency tunable semiconducting laser has laser medium temperature control based on arrangement with heat sink connected to heat source by low thermal conductivity element
The laser has a non fully de-mirrored laser diode in a resonator. Time variations in radiation frequency are caused by local heating of the semiconductor with temperature gradients formed to the surroundings and mechanical or thermal or electrical influences on the elements determining the resonant...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The laser has a non fully de-mirrored laser diode in a resonator. Time variations in radiation frequency are caused by local heating of the semiconductor with temperature gradients formed to the surroundings and mechanical or thermal or electrical influences on the elements determining the resonant frequency. Laser medium temperature control is based on an arrangement with a heat sink connected to a heat source by a low conductivity element. The laser has a non fully de-mirrored laser diode in an external or expanded resonator. Time variations in radiation frequency are caused by local heating of the semiconductor with temperature gradients formed to the surroundings and mechanical or thermal or electrical influences on the elements determining the resonant frequency. The temperature control of the laser medium is based on a thermal arrangement with a heat sink connected to a heat source by a low thermal conductivity mechanical element. |
---|