Exposure mask has alignment pattern with outer radiation transmissive area of row section and adjacent area of pattern at greater or lesser distance than adjacent areas within section

The mask has at least one alignment pattern for producing an alignment structure on a semiconducting plate. The pattern has radiation transmission areas in a row in an absorbent material. Adjacent areas in a section of at least three successive areas in the row have the same separation. An outer area of the section and an adjacent area of the pattern are at greater or lesser distances from each other than adjacent areas in the section. The mask (10) has at least one alignment pattern for producing an alignment structure on a semiconducting plate (18). The alignment pattern contains several radiation transmission areas arranged in one direction in a radiation absorbent material. Adjacent areas in a section (52) of at least three successive areas in the row have the same separation distance. An outer area (46) of the section and an adjacent area (48) of the pattern are at greater or lesser distances from each other than adjacent areas (44,46) in the section. AN Independent claim is also included for the following: a semiconducting plate with an alignment structure. Die Erfindung betrifft unter anderem eine Halbleiterscheibe (18) mit einer Ausrichtstruktur (10). Die Ausrichtstruktur enthält mehrere Lochstreifen (30 bis 48). In einem mittleren Abschnitt (52) sind einander benachbarte Lochstreifen (32 bis 46) in gleichen Abständen (A1) angeordnet. Die an den Abschnitt (52) angrenzenden Lochstreifen (30 bzw. 48) haben dagegen kleinere Abstände (A1, A3) zum benachbarten äußeren Streifen (32 bzw. 46) des Abschnitts (52).