Halbleiterspeicherzelle und Verfahren zu ihrer Herstellung

A semiconductor memory cell is formed in a substrate and includes a capacitor, a transistor, and an electrical contact. The transistor includes a doped region which is disposed in the substrate. An insulation layer is disposed on the substrate and the transistor. The capacitor is disposed on the insulation layer and includes a bottom capacitor electrode, a capacitor insulator on the bottom capacitor electrode, and a top capacitor electrode on the capacitor insulator. The bottom capacitor electrode is conductively connected to the doped region of the transistor through the use of the contact. Because the bottom capacitor electrode is conductively connected to the doped region only after the recrystallization of the capacitor insulator, the recrystallization step does not damage the electrical contact.