Bondinsel mit Stützstruktur in Halbleiterchip

A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielect...

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Bibliographische Detailangaben
Hauptverfasser: STAMPER, ANTHONY K, YANKEE, SALLY J, FEENEY, PAUL M, GEFFKEN, ROBERT M, BERGMAN-REUTER, BETTE L, RUTTEN, MATTHEW J, LANDIS, HOWARD S, ELLIS-MONAGHAN, JOHN J, PREVITI-KELLY, ROSEMARY A
Format: Patent
Sprache:ger
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Zusammenfassung:A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.