Zwischenverbindungsstruktur zum Einsatz von Halbleiterchips auf Schichtträgern

An interposer 10 for electrically coupling a semiconductor die 50 to a substrate 70, comprising: an interposer body 12 made of a dielectric material and having a contact surface 14 and an opposed bonding surface 16; a plurality of contact pads 18 arranged about the periphery of the contact surface 14; a plurality of bonding pads 20 arranged across generally the entire area of the bonding surface 16; and a plurality of electrically conductive conduits 22 disposed generally within the interposer body, such that each conduit 22 connects a respective one of the contact pads 18 with a respective one of the bonding pads 20. The interposer 10 may also include: a sealed cooling channel 28 defined within the interposer body 12; a fluid medium 30 generally filling the cooling channel 28; and a piezoelectric element 26 attached to the interposer body such that the piezoelectric element communicates with the cooling channel 28 and the fluid medium 30, the piezoelectric element being operatively coupled to at least two of the electrically conductive conduits 22.