Adjusting threshold voltage of MOS transistor having a polycrystalline silicon gate comprises implanting germanium ions into gate to change electron affinity of gate

Adjusting the threshold voltage of an MOS transistor having a polycrystalline silicon gate (4) comprises implanting germanium ions into the gate to change the electron affinity of the gate. Preferred Features: The process further comprises curing the gate implanted with the germanium ions by heat treatment whilst it is subjected to a high temperature for a predetermined period of time. Nitrogen ions are implanted into the gate to form an oxidation barrier layer (3) before the germanium ions are implanted. Verfahren zur Einstellung der Schwellenspannung eines MOS-Transistors, der ein aus Polysilizium bestehendes Gate aufweist, bei dem Germaniumionen in das aus Polysilizium bestehende Gate (4) zur Änderung der Austrittsarbeit des Gates implantiert werden.