METHOD OF GDBA2CU3O7 SUPERCONDUCTIVE LAYER PREPARATION ON SILICON PAD

The solution falls into the field of superconducting electronics and optoelectronics. The high-temperature layer GdBa2Cu3O7, sputtered on the Si backing, is prepared in such a way that the basic material GdBa2Cu3O7 is sputtered minimally 80 minutes on the heated Si backing at the temperature from 650 degrees C to 820 degrees C placed in the atmosphere O2 and Ar, while the partial pressure of O2 is 30 Pa and partial pressure of Ar is 60 Pa. The acquired sputtered layer is subsequently annealed in the oxygen with the pressure of 10 Pa at the temperature of 400 degrees C for duration of minimally 10 minutes, which creates the superconducting layer GdBa2Cu3O7 on the Si backing with the critical temperature higher than 80 K