DOUBLE-GRID TYPE HIGH-VOLTAGE MOS INTEGRATED CIRCUIT

The utility model discloses a double-grid type high-voltage MOS integrated circuit belonging to the field of the semiconductor integrated circuit. The double-grid type high-voltage MOS integrated circuit is composed of a plurality of same double-grid type high-voltage NMOS elements each of which has double-grid structure, the double-grid structure can increase an effective base width of a parasitic bipolar transistor to suppress the parasitic bipolar transistor to be activated to prevent from being broken down by a negative resistance. At the same time, the area is slightly increased compared with a single-grind element under the condition of invariant current. The double-grid type high-voltage MOS integrated circuit has the advantages of simple structure and convenient fabrication, the double-grid type high-voltage MOS integrated circuit adopts a standard n trap CMOS process, and the double-grid type high-voltage MOS integrated circuit can be widely used as a driver for the automatic control and a measuring system of plasma display, electro luminescence and a printing and copying operating mechanism.