Double-base-island packaging form structure of gate-associated transistor
The utility model discloses a double-base-island packaging form structure of a gate-associated transistor, which belongs to the technical field of transistors and comprises a transistor plastic package body, a cavity is formed in the transistor plastic package body, a base island is arranged on the...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model discloses a double-base-island packaging form structure of a gate-associated transistor, which belongs to the technical field of transistors and comprises a transistor plastic package body, a cavity is formed in the transistor plastic package body, a base island is arranged on the opposite side in the cavity of the transistor plastic package body, a chip is mounted on the base island, and the chip is connected with the transistor plastic package body. An adjusting assembly is arranged between the protective cover plate and the transistor plastic package body, through cooperation of the adjusting assembly and the protective cover plate, a protection effect can be provided for the transistor plastic package body, the transistor plastic package body can be conveniently disassembled and assembled by a worker, and a base island and a chip in the transistor plastic package body are detected; the first heat dissipation assembly and the second heat dissipation assembly can release heat generated by |
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