Air inlet assembly and process chamber

The utility model provides an air inlet assembly which is applied to semiconductor equipment and comprises a shunting part which comprises a central flow channel, two first bypass flow channels arranged on the two sides of the central flow channel respectively and two second bypass flow channels arranged on the sides, away from the central flow channel, of the two first bypass flow channels respectively; and the air supply part comprises a central air supply pipeline communicated with the central flow channel, a first bypass air supply pipeline communicated with the two first bypass flow channels and a second bypass air supply pipeline communicated with the two second bypass flow channels. The utility model further provides a process chamber comprising the first air inlet assembly. The gas inlet assembly and the process chamber can regulate and control the thickness of an epitaxial layer formed by gas deposition in different areas of the surface of a wafer, and the uniformity of the thickness of the epitaxial