Dynamic parameter testing system for GaN device
The utility model discloses a GaN device dynamic parameter test system, which comprises a control module, an input power supply module, a switch driving module, a first GaN device, a second GaN device, a load inductance module and a test module, and is characterized in that the control module is con...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model discloses a GaN device dynamic parameter test system, which comprises a control module, an input power supply module, a switch driving module, a first GaN device, a second GaN device, a load inductance module and a test module, and is characterized in that the control module is connected with the input power supply module, the switch driving module, the test module and the load inductance module; the first GaN device is connected with the input power supply module, the switch driving module, the second GaN device, the test module and the load inductance module, the switch driving module is connected with the second GaN device, and the second GaN device is connected with the input power supply module and the test module. The dynamic parameter testing system for the GaN device has extremely high testing flexibility, different driving circuit boards can be replaced according to requirements, key device parameters such as grid resistance and load inductance can be changed, the accuracy of used e |
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