Plasma etching apparatus

The embodiment of the utility model provides plasma etching equipment. The plasma etching equipment comprises a body, a radio frequency system, a gas path system and a temperature control system, a chuck is arranged in the cavity of the body and used for bearing a sample. The temperature control system is used for adjusting the temperature of the sample to a plasma oxidation temperature and a plasma etching temperature. The radio frequency system is used for applying bias voltage on the card and forming an induced electric field in the cavity. The gas path system comprises a first gas pipeline and a second gas pipeline which are different in pipe diameter, are used for conveying oxidizing gas and etching gas respectively and are opened and closed in corresponding processing procedures. Therefore, in the embodiment of the invention, plasma oxidation and plasma etching procedures can be realized in the same cavity, the process requirement that only transverse etching is needed and longitudinal etching is not ne