Semiconductor device

Various embodiments of the utility model relate to a semiconductor device, comprising a transistor arranged on a first side of a substrate; the first dielectric layer is arranged at the first side of the substrate and is positioned beside the transistor; the first metal through hole penetrates through the first dielectric layer and is positioned beside the transistor; a first interconnect structure disposed over the first side of the substrate and electrically connected to the transistor and the first metal via; a capacitor located at a second side of the substrate opposite to the first side; the second dielectric layer is arranged beside the capacitor; the second metal through hole penetrates through the second dielectric layer and the substrate and lands on the first metal through hole; and a second interconnect structure disposed over the second side of the substrate and electrically connected to the capacitor and the second metal via. 本实用新型实施例的各种实施例涉及一种半导体装置，其包括：晶体管，设置于衬底的第一侧处；第一介电层，设置于所述衬底的所述第一侧处且位于所述晶体管