Power module
There is provided a power module (10) comprising a substrate (2), an electronic component (3) and an electrical connection (4) wherein the power module further comprises a first connection layer (5B) and a second connection layer (5C). The substrate (2) has a first metallization layer (21) and a sec...
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| creator | BEYER HOLGER ZHANG BIWEI YAGOUBI, FAROUK |
| description | There is provided a power module (10) comprising a substrate (2), an electronic component (3) and an electrical connection (4) wherein the power module further comprises a first connection layer (5B) and a second connection layer (5C). The substrate (2) has a first metallization layer (21) and a second metallization layer (22) which is spatially separated from the first metallization layer (21) by a separation trench (2T). The first connection layer (5B) is formed between the substrate (2) and the electronic component (3) in the vertical direction. The electronic component (3) is a semiconductor chip and is electrically and thermally connected to the first metallization layer (21) through a first connection layer (5B) as a patterned sintered connection layer that forms a sintered connection between the substrate (2) and the electronic component (3). In a top view, the region (50) of the sintered connection is partially covered by a sintered material, and the uncovered sub-region (50U) is delimited by one or s |
| format | Patent |
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The substrate (2) has a first metallization layer (21) and a second metallization layer (22) which is spatially separated from the first metallization layer (21) by a separation trench (2T). The first connection layer (5B) is formed between the substrate (2) and the electronic component (3) in the vertical direction. The electronic component (3) is a semiconductor chip and is electrically and thermally connected to the first metallization layer (21) through a first connection layer (5B) as a patterned sintered connection layer that forms a sintered connection between the substrate (2) and the electronic component (3). 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The substrate (2) has a first metallization layer (21) and a second metallization layer (22) which is spatially separated from the first metallization layer (21) by a separation trench (2T). The first connection layer (5B) is formed between the substrate (2) and the electronic component (3) in the vertical direction. The electronic component (3) is a semiconductor chip and is electrically and thermally connected to the first metallization layer (21) through a first connection layer (5B) as a patterned sintered connection layer that forms a sintered connection between the substrate (2) and the electronic component (3). 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Power module |
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