Silicon carbide MOSFET with adjustable charge balance threshold voltage

The utility model provides a silicon carbide MOSFET with an adjustable charge balance threshold voltage. The silicon carbide MOSFET comprises a silicon carbide substrate; the isolation layer is arranged on the upper side surface of the silicon carbide substrate; the source electrode source region is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HE JIA, ZHANG YUJIE, ZHANG CHANGSHA, SHAN TIWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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