Silicon carbide MOSFET with adjustable charge balance threshold voltage

The utility model provides a silicon carbide MOSFET with an adjustable charge balance threshold voltage. The silicon carbide MOSFET comprises a silicon carbide substrate; the isolation layer is arranged on the upper side surface of the silicon carbide substrate; the source electrode source region is arranged on the upper side surface of the isolation layer; the drain electrode source region is arranged on the upper side surface of the isolation layer; the conducting channel region is arranged on the upper side surface of the isolation layer, the left side surface of the conducting channel region is connected to the right side surface of the source electrode source region, and the right side surface of the conducting channel region is connected to the left side surface of the drain electrode source region; the insulating layer is arranged on the upper side surface of the conductive channel region, and the insulating layer is provided with a groove; the drain electrode metal layer is connected to the drain elec