TVS diode structure

TVS diode structure

The utility model discloses a TVS diode structure, which relates to the technical field of diodes and comprises a packaging shell, a lower flat copper ring is mounted at the inner bottom of the packaging shell, the lower part of the lower flat copper ring extends to the outside of the packaging shel...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: XIE WEILIAN, ZHANG HONG, QIN BO, QIU GUOPING, YANG JING
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator XIE WEILIAN
ZHANG HONG
QIN BO
QIU GUOPING
YANG JING
description The utility model discloses a TVS diode structure, which relates to the technical field of diodes and comprises a packaging shell, a lower flat copper ring is mounted at the inner bottom of the packaging shell, the lower part of the lower flat copper ring extends to the outside of the packaging shell, a first graphene coating is coated on the surface of the lower part of the lower flat copper ring, and a lead frame is mounted at the top of the lower flat copper ring. According to the TVS diode structure, the lower flat copper ring is attached to the bottom of the lead frame provided with the chip, the lower half portion of the lower flat copper ring is located at the bottom of the shell, the upper flat copper ring is attached to the upper surface of the chip, the upper half portion of the upper flat copper ring is located at the top of the shell, and when heat is generated in the diode, the larger the contact area between the flat copper rings and the chip is, the higher the heat conduction efficiency is. Thr
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN221201159UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN221201159UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN221201159UU3</originalsourceid><addsrcrecordid>eNrjZBAOCQtWSMnMT0lVKC4pKk0uKS1K5WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8c5-RkaGRgaGhqaWoaHGRCkCAFFVIO8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TVS diode structure</title><source>esp@cenet</source><creator>XIE WEILIAN ; ZHANG HONG ; QIN BO ; QIU GUOPING ; YANG JING</creator><creatorcontrib>XIE WEILIAN ; ZHANG HONG ; QIN BO ; QIU GUOPING ; YANG JING</creatorcontrib><description>The utility model discloses a TVS diode structure, which relates to the technical field of diodes and comprises a packaging shell, a lower flat copper ring is mounted at the inner bottom of the packaging shell, the lower part of the lower flat copper ring extends to the outside of the packaging shell, a first graphene coating is coated on the surface of the lower part of the lower flat copper ring, and a lead frame is mounted at the top of the lower flat copper ring. According to the TVS diode structure, the lower flat copper ring is attached to the bottom of the lead frame provided with the chip, the lower half portion of the lower flat copper ring is located at the bottom of the shell, the upper flat copper ring is attached to the upper surface of the chip, the upper half portion of the upper flat copper ring is located at the top of the shell, and when heat is generated in the diode, the larger the contact area between the flat copper rings and the chip is, the higher the heat conduction efficiency is. Thr</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240621&amp;DB=EPODOC&amp;CC=CN&amp;NR=221201159U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240621&amp;DB=EPODOC&amp;CC=CN&amp;NR=221201159U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIE WEILIAN</creatorcontrib><creatorcontrib>ZHANG HONG</creatorcontrib><creatorcontrib>QIN BO</creatorcontrib><creatorcontrib>QIU GUOPING</creatorcontrib><creatorcontrib>YANG JING</creatorcontrib><title>TVS diode structure</title><description>The utility model discloses a TVS diode structure, which relates to the technical field of diodes and comprises a packaging shell, a lower flat copper ring is mounted at the inner bottom of the packaging shell, the lower part of the lower flat copper ring extends to the outside of the packaging shell, a first graphene coating is coated on the surface of the lower part of the lower flat copper ring, and a lead frame is mounted at the top of the lower flat copper ring. According to the TVS diode structure, the lower flat copper ring is attached to the bottom of the lead frame provided with the chip, the lower half portion of the lower flat copper ring is located at the bottom of the shell, the upper flat copper ring is attached to the upper surface of the chip, the upper half portion of the upper flat copper ring is located at the top of the shell, and when heat is generated in the diode, the larger the contact area between the flat copper rings and the chip is, the higher the heat conduction efficiency is. Thr</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAOCQtWSMnMT0lVKC4pKk0uKS1K5WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8c5-RkaGRgaGhqaWoaHGRCkCAFFVIO8</recordid><startdate>20240621</startdate><enddate>20240621</enddate><creator>XIE WEILIAN</creator><creator>ZHANG HONG</creator><creator>QIN BO</creator><creator>QIU GUOPING</creator><creator>YANG JING</creator><scope>EVB</scope></search><sort><creationdate>20240621</creationdate><title>TVS diode structure</title><author>XIE WEILIAN ; ZHANG HONG ; QIN BO ; QIU GUOPING ; YANG JING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN221201159UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>XIE WEILIAN</creatorcontrib><creatorcontrib>ZHANG HONG</creatorcontrib><creatorcontrib>QIN BO</creatorcontrib><creatorcontrib>QIU GUOPING</creatorcontrib><creatorcontrib>YANG JING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XIE WEILIAN</au><au>ZHANG HONG</au><au>QIN BO</au><au>QIU GUOPING</au><au>YANG JING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TVS diode structure</title><date>2024-06-21</date><risdate>2024</risdate><abstract>The utility model discloses a TVS diode structure, which relates to the technical field of diodes and comprises a packaging shell, a lower flat copper ring is mounted at the inner bottom of the packaging shell, the lower part of the lower flat copper ring extends to the outside of the packaging shell, a first graphene coating is coated on the surface of the lower part of the lower flat copper ring, and a lead frame is mounted at the top of the lower flat copper ring. According to the TVS diode structure, the lower flat copper ring is attached to the bottom of the lead frame provided with the chip, the lower half portion of the lower flat copper ring is located at the bottom of the shell, the upper flat copper ring is attached to the upper surface of the chip, the upper half portion of the upper flat copper ring is located at the top of the shell, and when heat is generated in the diode, the larger the contact area between the flat copper rings and the chip is, the higher the heat conduction efficiency is. Thr</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN221201159UU
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TVS diode structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T15%3A53%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=XIE%20WEILIAN&rft.date=2024-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN221201159UU%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true