Semiconductor device

A semiconductor device includes a current regulative diode element and a carrier plate. The current regulative diode element comprises a substrate, a first doped region, a second doped region, a third doped region, a fourth doped region, a fifth doped region, a first insulating layer, a first metal and a second metal. The first metal and the second metal are respectively arranged on the same side of the constant current diode element. The carrier plate is configured to carry the current regulative diode element, and the first metal and the second metal of the current regulative diode element face the carrier plate together and are coupled to the carrier plate through a first conductive material and a second conductive material. 一种半导体装置，包括一恒流二极管元件及一载板。该恒流二极管元件包括一基板、一第一掺杂区、一第二掺杂区、一第三掺杂区、一第四掺杂区、一第五掺杂区、一第一绝缘层、一第一金属及一第二金属。该第一金属及该第二金属分别位于该恒流二极管元件的同一侧。该载板被配置为承载该恒流二极管元件，该恒流二极管元件的该第一金属及该第二金属共同地面向该载板且透过一第一导电材料及一第二导电材料耦接至该载板上。