Semiconductor device

A semiconductor device includes a transistor disposed in an active region. The transistor includes a source/drain feature, a fin channel, and a gate structure surrounding the fin channel. The transistor also includes an insulating region disposed at the active edge. The active edge is located at the boundary of the active region. The insulating region includes a trench. The groove is provided with a thinning part. And the width of the thinning part of the groove at the top of the fin channel is greater than that of the thinning part of the groove at the bottom of the gate structure. 一种半导体装置，包括：设置在一主动区内的一晶体管。晶体管包括：一源极/漏极特征部件、一鳍部通道及一包围鳍部通道上的栅极结构。晶体管也包括：设置在主动边缘的绝缘区。主动边缘位于主动区的边界。绝缘区包括一沟槽。沟槽具有一渐细部。位于鳍部通道顶部的沟槽的渐细部的宽度大于位于栅极结构底部的沟槽的渐细部的宽度。