Testing system of gallium nitride transistor

The utility model discloses a test system of a gallium nitride transistor, which comprises a driving circuit and a control circuit, and is characterized in that the driving circuit generates a high-voltage pulse signal based on an input signal; and the control circuit is connected with the output end of the driving circuit, and when the transistor to be tested is coupled with the control circuit, the control circuit generates a test signal based on the high-voltage pulse signal and outputs the test signal to the drain electrode of the transistor to be tested to carry out monopulse dynamic on-resistance test, or controls the grid electrode and the source electrode of the transistor to be tested to be short-circuited to carry out reverse bias stress test. According to the technical scheme, corresponding circuit regulation and control can be performed according to different function tests, various different function tests are realized, the test process is simplified, the cost is reduced, and the test efficiency