Semiconductor device

A semiconductor device includes a conductive structure on a substrate, the conductive structure having a top surface, a first sidewall intersecting the top surface at a first contact, and a second sidewall intersecting the top surface at a second contact; and a barrier layer over the conductive structure, the barrier layer including a first protrusion extending downward along the first sidewall, a second protrusion extending downward along the second sidewall, and a lateral bridge over the top surface and interconnecting the first protrusion and the second protrusion. 一种半导体装置，包括位于基板上的导电结构，所述导电结构具有：顶表面、在第一接点与顶表面相交的第一侧壁、以及在第二接点与顶表面相交的第二侧壁；以及位于导电结构之上的阻挡层，所述阻挡层包括：沿着第一侧壁向下延伸的第一凸部、沿着第二侧壁向下延伸的第二凸部、以及在顶表面之上且与第一凸部及第二凸部互连的横向桥部。