Schottky diode added with BPSG layer

A Schottky diode added with a boron-phosphorosilicate glass layer comprises a substrate, a semiconductor film is arranged on the upper surface of the substrate, a left half PN junction and a right half PN junction are arranged on the upper surface of the semiconductor film, and Schottky metal layers are fixed on half of the upper surfaces of the left half PN junction and the right half PN junction; the other half of the upper surfaces of the left half PN junction and the right half PN junction are provided with oxidation insulating layers and are in contact with the semiconductor film; a boron-phosphorosilicate glass layer is arranged on the oxidation insulating layer, a layer of TiW is arranged on the upper surfaces of the schottky metal layer and the boron-phosphorosilicate glass layer, and the upper surface of the TiW and the lower surface of the substrate are coated with metal electrodes. 一种增加硼磷硅玻璃层的肖特基二极管，包括基底，基底的上表面为半导体薄膜，半导体薄膜的上表面上设有左半PN结和右半PN结，左半、右半的PN结的上表面的一半固定有肖特基金属层；左半、右半的PN结的上表面的另一半设有氧化绝缘层并与半导体薄膜相