Composite patterned sapphire substrate and LED chip

The utility model relates to a composite patterned sapphire substrate and an LED chip, and belongs to the technical field of light emitting diodes. Aiming at the problem of further improving the brightness of the LED, the utility model provides the following technical scheme: the LED light source comprises a sapphire substrate, the top of the sapphire substrate is provided with a pattern formed by a high-reflection film and a SiO2 layer which are periodically distributed, N-GaN is grown on the top of the patterned sapphire substrate, a plurality of cavities are formed in the N-GaN, and a plurality of LED light sources are arranged in the cavities. The top of the N-GaN is provided with an active region and a P-type electrode, wherein the active region is formed by 5-10 periods of In < 0.2 > Ga < 0.8 > N/GaN quantum wells, and the P-type electrode is used for being connected with a power supply. According to the utility model, the SiO2 medium in the optically thinner medium is replaced by the air medium, so tha