Electrostatic chuck and plasma etching equipment

The utility model provides an electrostatic chuck and plasma etching equipment, the electrostatic chuck is arranged in a reaction cavity of the plasma etching equipment, and the electrostatic chuck comprises a chuck body, and a wafer can be adsorbed on the upper surface of the chuck body; wherein the upper surface of the disc body is provided with a plurality of convex structures, the center of the disc body is provided with a through hole, and the through hole is used for cooling gas to pass through and enter the space between the upper surface of the disc body and a wafer. The electrostatic chuck provided by the utility model can prevent plasmas from entering the space between the wafer and the chuck body to damage the chuck body, and has a relatively long service life. 本申请提供一种静电吸盘和等离子刻蚀设备，静电吸盘设置在等离子刻蚀设备的反应腔体内，包括：盘体，晶圆能够被吸附在盘体的上表面上；其中，盘体的上表面设置有多个凸起结构，盘体中心设置有通孔，通孔用于供冷却气体通过并进入盘体的上表面与晶圆之间。本申请提供的静电吸盘能够防止等离子体进入到晶圆和盘体之间而损坏盘体，具有较高的使用寿命。