Semiconductor device

The utility model discloses a semiconductor device, which comprises a substrate in which a plurality of first conductive contact pads separated by an insulating layer are arranged; the plurality of convex columns are positioned on the substrate; each semiconductor structure is positioned between two adjacent convex columns and is in contact with the corresponding first conductive contact pad; the semiconductor structure comprises a first U-shaped conductive layer, a second U-shaped conductive layer, a first dielectric layer and a second conductive contact pad, wherein the first U-shaped conductive layer covers the upper surface of the first conductive contact pad and the side walls of the convex columns, the second U-shaped conductive layer is located in the first U-shaped conductive layer, the first dielectric layer is arranged in the second U-shaped conductive layer, and the second conductive contact pad is located above the first dielectric layer. The problem of electric leakage in the semiconductor device