Nitride high electron mobility transistor

The utility model relates to the technical field of semiconductor devices, and discloses a nitride high electron mobility transistor, which comprises an HEMT epitaxial layer arranged on a substrate, a source electrode, a drain electrode and a grid electrode which are arranged on the HEMT epitaxial l...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU SHENGHOU, SUN XIGUO, WANG JINGJING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!