Nitride high electron mobility transistor

The utility model relates to the technical field of semiconductor devices, and discloses a nitride high electron mobility transistor, which comprises an HEMT epitaxial layer arranged on a substrate, a source electrode, a drain electrode and a grid electrode which are arranged on the HEMT epitaxial layer, an inverse piezoelectric function dielectric layer is arranged on the surface of the HEMT epitaxial layer between the grid electrode and the source electrode and between the grid electrode and the drain electrode, and the inverse piezoelectric function dielectric layer is arranged on the surface of the HEMT epitaxial layer. The top passivation layer covers the source electrode, the drain electrode, the grid electrode and the inverse piezoelectric functional dielectric layer; the inverse piezoelectric functional dielectric layer deforms under the action of an electric field, stress acts on the HEMT epitaxial layer, current attenuation caused by electrons captured by the trap effect is compensated through stres