Crucible for silicon carbide single crystal growth and silicon carbide single crystal growth system

The utility model discloses a crucible for silicon carbide single crystal growth and a silicon carbide single crystal growth system.The crucible for silicon carbide single crystal growth comprises a crucible body, a material groove is formed in the crucible body, and a baffle is arranged at the upper end of the material groove; and the baffle is used for controlling the gas flow direction during silicon carbide sublimation and relieving the gas flow rate during silicon carbide sublimation. Therefore, the influence of facet effect during growth of silicon carbide is relieved, the convex rate of a grown crystal ingot is reduced, and generation of thermal stress is reduced. 本申请公开了一种碳化硅单晶生长用坩埚以及碳化硅单晶生长系统，其中，碳化硅晶体生长用坩埚包括坩埚本体，所述坩埚本体形成有料槽，所述料槽的上端具有挡板，所述挡板用于控制碳化硅升华时的气流方向和缓解碳化硅升华时的气体流速。以此缓解碳化硅生长时小平面效应的影响，减小生长得到的晶锭凸率，减少热应力的产生。