Single-tube IGBT with half-bridge circuit structure

The utility model belongs to the field of semiconductor device manufacturing. The single-tube IGBT with the half-bridge circuit structure comprises a DBC substrate, a left IGBT chip and a right IGBT chip, the front face and the back face of the DBC substrate are both covered with copper layers, the copper layer on the back face of the DBC substrate is in a one-piece type, the copper layer on the front face of the DBC substrate is in a split type, the left IGBT chip and the right IGBT chip are symmetrically welded to the two copper layers on the front face of the DBC substrate, the two IGBT chips are connected into a half-bridge structure through a bonding wire, and the half-bridge structure is connected with the left IGBT chip through a bonding wire. A terminal J1 and a terminal J2 are led out from the grid electrode and the collector electrode of the left IGBT chip respectively, a terminal J4 and a terminal J5 are led out from the emitting electrode and the grid electrode of the right IGBT chip respectively,