Semiconductor structure

The utility model provides a semiconductor structure. In the semiconductor structure, the U-shaped channel layer is arranged in the vertical through hole in the gate conductive layer, and the first contact pad and the second contact pad are respectively arranged at the bottom and the top of the U-shaped channel layer, so that the whole semiconductor structure is vertically arranged, and the size is reduced. Moreover, the U-shaped channel layer is provided with the first channel layer and the second channel layer, and the first channel layer can be used for covering the gate dielectric layer in the preparation process of the gate dielectric layer, thereby preventing the gate dielectric layer from being damaged by etching bombardment, and facilitating the improvement of the performance stability of the semiconductor structure. 本实用新型提供了一种半导体结构。该半导体结构中，将U型沟道层设置在栅极导电层内的竖直通孔中，并将第一接触垫和第二接触垫分别设置在U型沟道层的底部和顶部，使得半导体结构整体以竖直的方式设置，实现了尺寸的缩减。并且，U型沟道层具有第一沟道层和第二沟道层，第一沟道层可用于在栅极介质层的制备过程中覆盖栅极介质层，避免栅极介质层受到刻蚀轰击而产生刻蚀损伤，有利于提高半导体结构的性能